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PNP Transistor Specs & Ratings

The document provides specifications for the 2SB647 and 2SB647A PNP general purpose transistors. It includes maximum ratings, electrical characteristics, classification of DC current gain ranges, typical characteristics curves, and TO-92MOD outline dimensions. The transistors are Pb-free and have a DC current gain of 60-320 with a collector-emitter saturation voltage under 1V.

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William Jimenez
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112 views5 pages

PNP Transistor Specs & Ratings

The document provides specifications for the 2SB647 and 2SB647A PNP general purpose transistors. It includes maximum ratings, electrical characteristics, classification of DC current gain ranges, typical characteristics curves, and TO-92MOD outline dimensions. The transistors are Pb-free and have a DC current gain of 60-320 with a collector-emitter saturation voltage under 1V.

Uploaded by

William Jimenez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SB647 / 2SB647A

PNP General Purpose Transistors


P b Lead(Pb)-Free
2

1
3 2
3
1.EMITTER
3.BASE
1 2.COLLECTOR

TO-92MOD

MAXIMUM RATINGS(Ta=25°C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V

Collector-Base Voltage VCBO 120 V

Emitter-Base Voltage VEBO 5.0 V

Collector Current - Continuous IC 1000 mA

Total Device Dissipation


PD 900 mW
TA=25°C

Junction Temperature Tj +150 °C

Storage Temperature Tstg -55 to +150 °C

WEITRON 1/5 09-Dec-08


http://www.weitron.com.tw
2SB647 / 2SB647A

ELECTRICAL CHARACTERISTICS (TA=25ºC unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= -10? A , IE=0 -120 - V


Collector-emitter breakdown voltage 2SB647
-80 -
V(BR)CEO IC=-1mA , IB=0 V
-100
2SB647A
Emitter-base breakdown voltage V(BR)EBO IE= -10? A, IC=0 -5 - V

Collector cut-off current ICBO VCB= -100 V, IE=0 - -10 ?A

2SB647 60 320
hFE(1)* VCE=-5 V, IC= -150mA -
2SB647A 60 200
DC current gain
hFE(2) VCE=-5 V, IC= -500mA 30 - -

Collector-emitter saturation voltage VCEsat IC=-500mA, IB=-50mA - -1 V

Transition frequency fT VCE=-5V, IC= -150mA 140 - MHz

VCE=-10V, IE=0 -
Output capacitance Cob f=1 MHz
20 pF

CLASSIFICATION OF hFE
Rank B C D

2SB647 60-120 100-200 160-320


Range
2SB647A 60-120 100-200 -

WEITRON 2/5 09-Dec-08


http://www.weitron.com.tw
2SB647 / 2SB647A

Typical Characteristics

WEITRON 3/5 09-Dec-08


http://www.weitron.com.tw
2SB647 / 2SB647A

WEITRON 4/5 09-Dec-08


http://www.weitron.com.tw
2SB647 / 2SB647A

TO-92MOD Outline Dimensions unit:mm

TO-92MOD
J

Dim M in M ax
D
A 4.70 5.10
B 1.73 2.03
C 0.40 0.60
C D 0.90 1.10
M

E 0.40 0.50
G 5.80 6.20
J 8.40 8.80
K
K 1.50Typ
L
L 2.90 3.10
M 12.20 13.45
B
A
E

WEITRON 5/5 09-Dec-08


http://www.weitron.com.tw

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